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SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
Case : ITO-3P
( FP5W90HVX2 )
900V 5A
FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High voltage power supply Inverter
(Unit : mm)
2SK2673
OUTLINE DIMENSIONS
RATINGS
Absolute Maximum Ratings iTc = 25j Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain CurrentiDCj ID IDP Continuous Drain CurrentiPeak) IS Continuous Source CurrentiDCj PT Total Power Dissipation IAR Repetitive Avalanche Current Single Avalanche Energy EAS Repetitive Avalanche Energy EAR Vdis Dielectric Strength TOR Mounting Torque Conditions Ratings -55150 150 900 }30 5 10 5 50 5 100 10 2 0.8 Unit V A W A mJ kV Nm
Pulse width10Es, Duty cycle1/100
Tch = 150 Tch = 25 Tch = 25 Terminals to case,@AC 1 minute i Recommended torque F0.5 Nm j
Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
HVX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tran]conductance Static Drain-Source On-]tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage AEjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions
2SK2673 ( FP5W90HVX2 )
Min. 900 2. 4 2. 5 Typ. Max. 250 }0. 1 2. 8 3. 5 1. 5 2. 5 Unit V EA S V /L nC pF 100 350 ns
ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = }30V, VDS = 0V ID = 2. 5A, VDS = 10V ID = 2.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 2.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 5A VDS = 25V, VGS = 0V, f = 1MHZ ID = 2. 5A, RL = 60, VGS = 10V
4. 0 2. 1 3. 0 45 1140 23 105 55 210
Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
2SK2673
10 Tc = -55C
Transfer Characteristics
25C 8
Drain Current ID [A]
6
100C 150C
4
2 VDS = 25V TYP 0 0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2673
100
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) []
10
ID = 2.5A
1
0.1
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [C]
2SK2673
6
Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [C]
2SK2673
10
Safe Operating Area
100s 200s 1
Drain Current ID [A]
R DS(ON) limit
1ms
10ms 0.1 DC
Tc = 25C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2673
Transient Thermal Impedance
10
1
Transient Thermal Impedance jc(t) [C/W]
0.1
0.01 10-4 10-2
10-3
10-1
100
101
102
Time t [s]
2SK2673
100
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%]
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [C]
2SK2673
10000
Capacitance
Ciss 1000
Capacitance Ciss Coss Crss [pF]
100
Coss
Crss
10
f=1MHz Ta=25C TYP 1 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2673
Single Avalanche Current - Inductive Load
VDD = 100V VGS = 15V 0V Rg = 60 IAS = 5A
10
Single Avalanche Current IAS [A]
EAR = 10mJ
EAS = 100mJ
1 0.1 1
10
100
Inductance L [mH]
2SK2673
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [C]
2SK2673
500
Gate Charge Characteristics
20
VDS
Drain-Source Voltage VDS [V]
VDD = 400V 200V 300 100V
VGS
15
10 200
5 100 ID = 5A TYP 0 0 20 40 60 80 0 100
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400

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